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RF1S22N10SM

RF1S22N10SM

Manufacturer Part RF1S22N10SM
Manufacturer Harris Corporation
Description N-CHANNEL POWER MOSFET
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet -
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018
Product Attributes
Type Description
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:22A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Shipping
Shipping Type Ship Fee Lead Time
DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT $20.00-$40.00 (0.50 KG) 2-6 days
EMS $20.00-$40.00 (0.50 KG) 3-7 days
REGISTERED AIR MAIL $2.5-$7 (0.50 KG) 20-35 days
Payment
Payment method Hand Fee
Telegraphic Transfer charge US$30.00 banking fee.
Paypal charge 4.0% service fee.
Credit Card charge 4% service fee.
Western Union charge US$0.00 banking fee.
Money Gram charge US$0.00 banking fee.
Guarantees
  • We provide 90 days warranty;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
  • If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
  • If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
  • Taxes & VAT will not be included;
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Availability :
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